Ferroelectric thin film and forming method thereof

[특허 요약] A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.

특허 등록번호

12320032B

특허 출원번호

202318193483

출원일

2023.03.30

등록일

2025.06.03

국가

미국

출원인

서울대학교산학협력단, 기초과학연구원

발명자

Jungwon Park, Kunwoo Park

중요 키워드

thin film, ferroelectric thin, hfo, phase, forming