보유 특허 상세 정보를 불러오는 중입니다...
[특허 요약] A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.
| 특허 상태 | 등록 |
| 출원인 | 서울대학교산학협력단, 기초과학연구원 |
| 발명자 | Jungwon Park, Kunwoo Park |
| 출원번호 | 202318193483 |
| 출원일 | 2023.03.30 |
| 등록번호 | 12320032B |
| 등록일 | 2025.06.03 |
| 중요 키워드 | thin filmferroelectric thinhfophaseforming |
A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.
| 출원번호 | 출원일 |
| 1020220043122 | 2022.04.06 |
| 종류코드 | |
| A | |
| 외부 링크 | |
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