[특허 요약] Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below,BexM1-xO,where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

등록번호

11417516B

출원번호

201816225432

출원인

한국과학기술연구원, 기초과학연구원, 울산과학기술원

키워드

dielectric layer, oxide, rocksalt, alkaline earth, memory device